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PHASE-CHANGE SWITCH SIGNED

Phase-Change Materials and Switches for Enabling Beyond-CMOS Energy Efficient Applications

Total Cost €

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EC-Contrib. €

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Partnership

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 PHASE-CHANGE SWITCH project word cloud

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Project "PHASE-CHANGE SWITCH" data sheet

The following table provides information about the project.

Coordinator
ECOLE POLYTECHNIQUE FEDERALE DE LAUSANNE 

Organization address
address: BATIMENT CE 3316 STATION 1
city: LAUSANNE
postcode: 1015
website: www.epfl.ch

contact info
title: n.a.
name: n.a.
surname: n.a.
function: n.a.
email: n.a.
telephone: n.a.
fax: n.a.

 Coordinator Country Switzerland [CH]
 Project website https://phasechange-switch.org/
 Total cost 3˙883˙412 €
 EC max contribution 3˙883˙412 € (100%)
 Programme 1. H2020-EU.1.2.1. (FET Open)
 Code Call H2020-FETOPEN-1-2016-2017
 Funding Scheme RIA
 Starting year 2017
 Duration (year-month-day) from 2017-01-01   to  2020-06-30

 Partnership

Take a look of project's partnership.

# participants  country  role  EC contrib. [€] 
1    ECOLE POLYTECHNIQUE FEDERALE DE LAUSANNE CH (LAUSANNE) coordinator 658˙750.00
2    GESELLSCHAFT FUR ANGEWANDTE MIKRO UND OPTOELEKTRONIK MIT BESCHRANKTERHAFTUNG AMO GMBH DE (AACHEN) participant 782˙375.00
3    THE CHANCELLOR MASTERS AND SCHOLARSOF THE UNIVERSITY OF CAMBRIDGE UK (CAMBRIDGE) participant 655˙000.00
4    IBM RESEARCH GMBH CH (RUESCHLIKON) participant 612˙412.00
5    MAX-PLANCK-GESELLSCHAFT ZUR FORDERUNG DER WISSENSCHAFTEN EV DE (MUENCHEN) participant 593˙625.00
6    THALES SA FR (COURBEVOIE) participant 581˙250.00

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 Project objective

The proposal PHASE-CHANGE SWITCH addresses the need for combined energy efficiency and extended functionality with the engineering of new classes of solid-state Beyond CMOS switches exploiting the abrupt phase-change (Metal-Insulator-Transition - MIT) in materials and at temperatures that make them interesting for electronic circuits and systems by their performance, energy efficiency and scalability. The proposal includes disruptive research contributions on the whole value chain, from novel phase-change materials to new device and circuit architectures together with their scaling and integration on silicon and GaN platforms. On materials alloying and straining techniques in phase-change systems are used for the engineering of the transition temperature and the ON and OFF bandgaps (conductivity) of VO2. A significant advance is the three-terminal energy efficient phase-change electronic switch with deep-sub-thermionic average slope (<10mV/decade at room temperature), operating at sub-0.5V voltage supply, with ON current better than silicon MOSFET and OFF current comparable with tunnel FETs, surpassing the state-of-the-art. The proposal focuses on smart design and exploitation of the unique properties of the phase-change VO2 beyond CMOS switches, by targeting with the same technology platform: (i) von-Neumann steep-slope logic devices and circuits, to extend CMOS with novel functionality and energy efficiency, (ii) uniquely reconfigurable energy efficient radio-frequency (RF) circuit functions from 1 to 100GHz, (iii) unconventional scalable neuristors exploiting the hysteretic RC switching behaviour for neuromorphic computation, and, (iv) disruptive classes of solid-state ionitronic devices for neuromorphic computation, exploiting non-volatile memory effects. The proposed research is expected to create new applications and markets and reinforce the leadership of European industrial players in the field of energy efficient IoT and high frequency communications.

 Deliverables

List of deliverables.
Data management plan Open Research Data Pilot 2020-01-22 12:05:01
Website, project press release and flyer Websites, patent fillings, videos etc. 2020-01-22 12:05:00
Report on fundamental calculations: VO2 and V2O3 systems and band gap of NbO2 Documents, reports 2020-01-22 12:05:00
Two-terminal steep-slope MIT switches Documents, reports 2020-01-22 12:05:00
Design and fabrication of coupled relaxation oscillators from MHz to GHz Documents, reports 2020-01-22 12:05:00
Three-terminal steep-slope MIT switches. Documents, reports 2020-01-22 12:05:00
Report on the optimization of the three deposition processes Documents, reports 2020-01-22 12:05:00
Report on band gaps of Alloyed (V,metal)O2 systems Documents, reports 2020-01-22 12:05:00
Design and simulation of VO2 RF switches and circuit applications Documents, reports 2020-01-22 12:05:00

Take a look to the deliverables list in detail:  detailed list of PHASE-CHANGE SWITCH deliverables.

 Publications

year authors and title journal last update
List of publications.
2019 Elisabetta Corti, Bernd Gotsmann, Kirsten Moselund, Adrian M. Ionescu, John Robertson, Siegfried Karg
Scaled resistively-coupled VO2 oscillators for neuromorphic computing
published pages: 107729, ISSN: 0038-1101, DOI: 10.1016/j.sse.2019.107729
Solid-State Electronics 2020-02-06
2019 Zhaofu Zhang, Jiaqi Chen, Yuzheng Guo, John Robertson
Band alignment calculation of dielectric films on VO2
published pages: 111057, ISSN: 0167-9317, DOI: 10.1016/j.mee.2019.111057
Microelectronic Engineering 216 2020-02-06
2019 Andrei A. Muller, Alin Moldoveanu, Victor Asavei, Riyaz A. Khadar, Esther Sanabria-Codesal, Anna Krammer, Montserrat Fernandez-Bolaños, Matteo Cavalieri, Junrui Zhang, Emanuele Casu, Andreas Schuler, Adrian M. Ionescu
3D Smith charts scattering parameters frequency-dependent orientation analysis and complex-scalar multi-parameter characterization applied to Peano reconfigurable vanadium dioxide inductors
published pages: , ISSN: 2045-2322, DOI: 10.1038/s41598-019-54600-5
Scientific Reports 9/1 2020-02-04
2019 Haichang Lu, John Robertson
Density Functional Theory Studies of the Metal–Insulator Transition in Vanadium Dioxide Alloys
published pages: 1900210, ISSN: 0370-1972, DOI: 10.1002/pssb.201900210
physica status solidi (b) 256/12 2020-02-04
2018 Emanuele Andrea Casu, Nicolo Oliva, Matteo Cavalieri, Andrei A. Muller, Alessandro Fumarola, Wolfgang A. Vitale, Anna Krammer, Andreas Schuler, Montserrat Fernandez-Bolanos, Adrian M. Ionescu
Tunable RF Phase Shifters Based on Vanadium Dioxide Metal Insulator Transition
published pages: 965-971, ISSN: 2168-6734, DOI: 10.1109/jeds.2018.2837869
IEEE Journal of the Electron Devices Society 6 2020-01-22
2017 Anna Krammer, Arnaud Magrez, Wolfgang A. Vitale, Piotr Mocny, Patrick Jeanneret, Edouard Guibert, Harry J. Whitlow, Adrian M. Ionescu, Andreas Schüler
Elevated transition temperature in Ge doped VO 2 thin films
published pages: 45304, ISSN: 0021-8979, DOI: 10.1063/1.4995965
Journal of Applied Physics 122/4 2020-01-22
2018 Emanuele Andrea Casu, Andrei A. Muller, Matteo Cavalieri, Alessandro Fumarola, Adrian Mihai Ionescu, Montserrat Fernandez-Bolanos
A Reconfigurable Inductor Based on Vanadium Dioxide Insulator-to-Metal Transition
published pages: 795-797, ISSN: 1531-1309, DOI: 10.1109/lmwc.2018.2854961
IEEE Microwave and Wireless Components Letters 28/9 2020-01-22
2018 Emanuele Andrea Casu, Andrei A. Muller, Montserrat Fernandez-Bolanos, Alessandro Fumarola, Anna Krammer, Andreas Schuler, Adrian M. Ionescu
Vanadium Oxide Bandstop Tunable Filter for Ka Frequency Bands Based on a Novel Reconfigurable Spiral Shape Defected Ground Plane CPW
published pages: 12206-12212, ISSN: 2169-3536, DOI: 10.1109/access.2018.2795463
IEEE Access 6 2020-01-22

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