NOVOSIP

Nano-Voids in Strained Silicon for Plasmonics

 Coordinatore AARHUS UNIVERSITET 

 Organization address address: Nordre Ringgade 1
city: AARHUS C
postcode: 8000

contact info
Titolo: Ms.
Nome: Bodil
Cognome: Mølgaard
Email: send email
Telefono: +45 8715 2064

 Nazionalità Coordinatore Denmark [DK]
 Totale costo 318˙514 €
 EC contributo 318˙514 €
 Programma FP7-PEOPLE
Specific programme "People" implementing the Seventh Framework Programme of the European Community for research, technological development and demonstration activities (2007 to 2013)
 Code Call FP7-PEOPLE-2011-IIF
 Funding Scheme MC-IIF
 Anno di inizio 2012
 Periodo (anno-mese-giorno) 2012-07-01   -   2014-06-30

 Partecipanti

# participant  country  role  EC contrib. [€] 
1    AARHUS UNIVERSITET

 Organization address address: Nordre Ringgade 1
city: AARHUS C
postcode: 8000

contact info
Titolo: Ms.
Nome: Bodil
Cognome: Mølgaard
Email: send email
Telefono: +45 8715 2064

DK (AARHUS C) coordinator 318˙514.60

Mappa


 Word cloud

Esplora la "nuvola delle parole (Word Cloud) per avere un'idea di massima del progetto.

self    investigation    configuration    near    optical    assembled    si    nanovoids    layer    solar    sige    efficiency    cells    structures    light    carbon    plasmonic    thermal    structural    nanodots    irradiation    electronic    treatment    strained    crystalline    layers   

 Obiettivo del progetto (Objective)

'The project aims at exploring the use of nanovoids and nanodots prepared as plasmonic structures to enhance the efficiency of Si single-crystalline photovoltaic (PV) devices. Fabrication and experimental investigation of plasmonic structures in strained Si/SiGe multilayered structures will be carried to enhance light harvesting in solar cells due to both near-field and far-field effects. The main idea behind the production of nanovoids and nanodots is based on the ability of compressively strained thin SiGe alloy layers, incorporated in a Si matrix during epitaxial growth, to collect small-sized molecules (H, He, C) or vacancies, induced by irradiation. Further, thermal treatment results in the formation of nano-voids which are strictly assembled within the strained SiGe layers. The following key processes will be used: Molecular beam epitaxy of strained Si/SiGe/Si structures followed by irradiation with light ions (hydrogen, carbon) and rapid thermal treatment. This structure will then be additionally used as a template for segregation and self-assembling of metallic or carbon nanodots. The fundamental investigations of the structural, optical and electronic properties of the strained Si/SiGe layers will be carried out with a range of available methods for structural, electronical and optical characterization. By placing the nanovoids and nanodots in a highly doped emitter layer close enough to the p-n-junction that the near-fields will extend into the depletion layer, the effects of near-fields will be obtained. This will give a contribution to the electron-hole pair generation, and this will be additional to the far field effects. Being formed periodically, strained layers with self-assembled nanovoids or nanodots will display fundamentally unusual electronic and optical properties. These effects have not previously been experimentally studied in a solar cell configuration. The present system offers a unique configuration for such investigation.'

Introduzione (Teaser)

An EU-funded project sought to enhance the efficiency of crystalline silicon (Si) solar cells by growing nanometre-scale localised structures.

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