VIACARBON
Carbon Nanotubes for Interconnects and Switches
| Coordinatore | THE CHANCELLOR, MASTERS AND SCHOLARS OF THE UNIVERSITY OF CAMBRIDGE
Organization address
address: Trumpington St 6 contact info |
| Nazionalità Coordinatore | United Kingdom [UK] |
| Totale costo | 3˙485˙869 € |
| EC contributo | 2˙530˙000 € |
| Programma | FP7-ICT
Specific Programme "Cooperation": Information and communication technologies |
| Code Call | FP7-ICT-2007-1 |
| Funding Scheme | CP |
| Anno di inizio | 2008 |
| Periodo (anno-mese-giorno) | 2008-01-01 - 2011-06-30 |
Partecipanti
| # | ||||
|---|---|---|---|---|
| 1 |
THE CHANCELLOR, MASTERS AND SCHOLARS OF THE UNIVERSITY OF CAMBRIDGE
Organization address
address: Trumpington St 6 contact info |
UK (Cambridge) | coordinator | 0.00 |
| 2 |
COMMISSARIAT A L ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
Organization address
address: BATIMENT LE PONANT D, 25 RUE LEBLANC contact info |
FR (PARIS CEDEX 15) | participant | 0.00 |
| 3 |
ECOLE POLYTECHNIQUE FEDERALE DE LAUSANNE
Organization address
address: BATIMENT CE - 3316 - STATION 1 contact info |
CH (LAUSANNE) | participant | 0.00 |
| 4 |
INTEL PERFORMANCE LEARNING SOLUTIONS LIMITED
Organization address
address: COLLINSTOWN INDUSTRIAL ESTATE contact info |
IE (LEIXLIP, CO KILDARE) | participant | 0.00 |
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Obiettivo del progetto (Objective)
VIACARBON aims to develop carbon nanotubes for vertical and horizontal interconnects for CMOS nodes of 22 nm and beyond, and for NEMS RF switches. Carbon nanotubes are universally proposed as interconnects because of their huge current carrying capacity of 1E9 A/cm2. However, interconnects also need a low resistance, at least as low as copper. As CNTs are 1-dimensional conductors, they have a minimum quantum resistance of 6 kohms, which can only be reduced by laying many CNTs in parallel. The project aims to grow single wall nanotube mats with density of over 1E13 cm-2, by optimisation of the growth catalyst, and convert this into an industrially compatible technology for both vertical and horizontal interconnects.
A second aspect is to fabricate arrays of NEMs as RF switches to support new device functions in the interconnect layer: for reconfigurable interconnects, banks of programmable passives and power current switch.