FUNDMS
Functionalisation of Diluted Magnetic Semiconductors
| Coordinatore | INSTYTUT FIZYKI POLSKIEJ AKADEMII NAUK
Spiacenti, non ci sono informazioni su questo coordinatore. Contattare Fabio per maggiori infomrazioni, grazie. |
| Nazionalità Coordinatore | Poland [PL] |
| Totale costo | 2˙440˙000 € |
| EC contributo | 2˙440˙000 € |
| Programma | FP7-IDEAS-ERC
Specific programme: "Ideas" implementing the Seventh Framework Programme of the European Community for research, technological development and demonstration activities (2007 to 2013) |
| Code Call | ERC-2008-AdG |
| Funding Scheme | ERC-AG |
| Anno di inizio | 2009 |
| Periodo (anno-mese-giorno) | 2009-01-01 - 2013-12-31 |
Partecipanti
| # | ||||
|---|---|---|---|---|
| 1 |
UNIVERSITAT LINZ
Organization address
address: ALTENBERGERSTRASSE 69 contact info |
AT (LINZ) | beneficiary | 688˙371.25 |
| 2 |
UNIWERSYTET WARSZAWSKI
Organization address
address: Krakowskie Przedmiescie 26/28 contact info |
PL (WARSAW) | beneficiary | 341˙391.00 |
| 3 |
DANMARKS TEKNISKE UNIVERSITET
Organization address
address: Anker Engelundsvej 1, Building 101A contact info |
DK (KONGENS LYNGBY) | beneficiary | 168˙188.77 |
| 4 |
INSTYTUT FIZYKI POLSKIEJ AKADEMII NAUK
Organization address
address: AL LOTNIKOW 32/46 contact info |
PL (WARSZAWA) | hostInstitution | 1˙242˙049.00 |
| 5 |
INSTYTUT FIZYKI POLSKIEJ AKADEMII NAUK
Organization address
address: AL LOTNIKOW 32/46 contact info |
PL (WARSZAWA) | hostInstitution | 1˙242˙049.00 |
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Obiettivo del progetto (Objective)
'Low-temperature studies of transition metal doped III-V and II-VI compounds carried out over the last decade have demonstrated the unprecedented opportunity offered by these systems for exploring physical phenomena and device concepts in previously unavailable combinations of quantum structures and ferromagnetism in semiconductors. The work proposed here aims at combining and at advancing epitaxial methods, spatially-resolved nano-characterisation tools, and theoretical modelling in order to understand the intricate interplay between carrier localisation, magnetism, and magnetic ion distribution in DMS, and to develop functional DMS structures. To accomplish these goals we will take advantage of two recent breakthroughs in materials engineering. First, the attainment of high-k oxides makes now possible to generate interfacial hole densities up to 10^21 cm-3. We will exploit gated thin layers of DMS phosphides, nitrides, and oxides, in which hole delocalization and thus high temperature ferromagnetism is to be expected under gate bias. Furthermore we will systematically investigate how the Curie temperature of (Ga,Mn)As can be risen above 180 K. Second, the progress in nanoscale chemical analysis has allowed demonstrating that high temperature ferromagnetism of semiconductors results from nanoscale crystallographic or chemical phase separations into regions containing a large concentration of the magnetic constituent. We will elaborate experimentally and theoretically epitaxy and co-doping protocols for controlling the self-organised growth of magnetic nanostructures, utilizing broadly synchrotron radiation and nanoscopic characterisation tools. The established methods will allow us to obtain on demand either magnetic nano-dots or magnetic nano-columns embedded in a semiconductor host, for which we predict, and will demonstrate, ground-breaking functionalities. We will also assess reports on the possibility of high-temperature ferromagnetism without magnetic ions.'