LSV-SIE

The role of surface scattering and impurities in metallic lateral Spin-valve Devices

Coordinatore	BAR ILAN UNIVERSITY    more  Organization address address: BAR ILAN UNIVERSITY CAMPUS city: RAMAT GAN postcode: 52900 contact info Titolo: Ms. Nome: Estelle Cognome: Waise Email: send email Telefono: +972 3 5317439 Fax: +972 3 6353277
Nazionalità Coordinatore	Israel [IL]
Totale costo	100˙000 €
EC contributo	100˙000 €
Programma	FP7-PEOPLE Specific programme "People" implementing the Seventh Framework Programme of the European Community for research, technological development and demonstration activities (2007 to 2013)
Code Call	FP7-PEOPLE-2010-RG
Funding Scheme	MC-IRG
Anno di inizio	2010
Periodo (anno-mese-giorno)	2010-09-01   -   2014-08-31

 Partecipanti

#	participant	country	role	EC contrib. [€]
1	BAR ILAN UNIVERSITY  Organization address address: BAR ILAN UNIVERSITY CAMPUS city: RAMAT GAN postcode: 52900 contact info Titolo: Ms. Nome: Estelle Cognome: Waise Email: send email Telefono: +972 3 5317439 Fax: +972 3 6353277	IL (RAMAT GAN)	coordinator	100˙000.00

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 Obiettivo del progetto (Objective)

'The field of spintronics is receiving continuous and growing attention, due to the expected increase in functions of lateral spintronics devices to include promising elements such as nonvolatile spin field effect transistors, ultra-fast memories and spin-based quantum computers. But, in order to utilize such lateral applications in industrial settings, a critical improvement in their performance is necessary, for which much basic research is still required. An important issue, which is relevant to the nano-scale lateral devices and has not received much attention, is surface effects. Here, spin scattering from the surface can lead to loss of all spin signals. The study and understanding of spin scattering, due to surface effects is one of the major goals of the proposed research. The study of lateral spintronics devices has led to discovery of many new phenomena; include spin transfer torque; crossed Andreev reflections and the spin Hall Effect. In the latter, anisotropic spin dependent scattering in non-magnetic materials induce a transverse spin current. This enables the generation of spin polarized currents in non-magnetic material without the need of injection from a ferromagnet. But, a larger magnitude of the effect is vital if one considers this a realistic source of spin-polarized current for application. We aim at increasing the spin Hall effect in metallic spintronics devices by resolving quantitatively the geometrical and material related contributions of the effect. Study of these spin transport phenomena via local probe measurements is a very powerful approach, as has been demonstrated for semiconductors using optical methods. We intend to develop and measure the local spin accumulation by an MFM-based measurement with an anticipated ~10 nm spatial resolution. This is x100 better than previous measurements, and will enable us to spatially resolve the local spin accumulation in metallic devices.'