DISORDER CONTROL

Tuning Disorder in Chalcogenides to realize Advanced Functional Devices

Coordinatore	RHEINISCH-WESTFAELISCHE TECHNISCHE HOCHSCHULE AACHEN    more Spiacenti, non ci sono informazioni su questo coordinatore. Contattare Fabio per maggiori infomrazioni, grazie.
Nazionalità Coordinatore	Germany [DE]
Totale costo	2˙186˙000 €
EC contributo	2˙186˙000 €
Programma	FP7-IDEAS-ERC Specific programme: "Ideas" implementing the Seventh Framework Programme of the European Community for research, technological development and demonstration activities (2007 to 2013)
Code Call	ERC-2013-ADG
Funding Scheme	ERC-AG
Anno di inizio	2014
Periodo (anno-mese-giorno)	2014-03-01   -   2019-02-28

 Partecipanti

#	participant	country	role	EC contrib. [€]
1	RHEINISCH-WESTFAELISCHE TECHNISCHE HOCHSCHULE AACHEN  Organization address address: Templergraben 55 city: AACHEN postcode: 52062 contact info Titolo: Prof. Nome: Ernst Cognome: Schmachtenberg Email: send email Telefono: +49 241 8090490 Fax: +49 241 8092490	DE (AACHEN)	hostInstitution	2˙186˙000.00
2	RHEINISCH-WESTFAELISCHE TECHNISCHE HOCHSCHULE AACHEN  Organization address address: Templergraben 55 city: AACHEN postcode: 52062 contact info Titolo: Prof. Nome: Matthias Cognome: Wuttig Email: send email Telefono: +49 241 8027155 Fax: +49 2418022331	DE (AACHEN)	hostInstitution	2˙186˙000.00

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 Obiettivo del progetto (Objective)

'Better performance of future computers and communication equipment requires substantially higher speeds of switching devices at lower energy consumption. Those requirements can only be achieved by substantial improvement of the transport properties of the materials employed. The transport of charge and heat is strongly influenced by disorder. In recent years we have found a unique class of crystalline materials which combines an exceptionally high, yet tuneable degree of disorder with remarkable transport properties. This class includes the best phase change materials, superconductors with an unconventional coupling mechanism, good thermoelectrics, as well as known topological insulators. For these different phenomena disorder is either very beneficial or – if unconditioned - rather detrimental. Hence we need to be able to control disorder in these materials to tailor their properties. Exploring this concept requires the ability to understand, eliminate or harness the effects of disorder. Recently we have demonstrated an Anderson-type transition from insulating to metallic behaviour upon annealing. However, to fully utilize these ideas it is mandatory to realize devices with a more directly controllable degree of disorder. Within the framework of this project, we will develop a tuneable Anderson insulator to delocalize charge carriers. This allows us to address a) the transition from an insulator to a metal, the impact of disorder on superconductors (b) and topological insulators (c) and finally d) the ability to control thermoelectric properties by tuneable electronic disorder. From the results to be obtained we expect consequences for a wide range of materials listed in our “treasure map”, with promising new technological applications in various devices.'