SKYFLASH

Development of Rad Hard non volatile Flash memories for space applications

Coordinatore	RedCat Devices Srl    more  Organization address address: via Valsolda 21 city: Milano postcode: 20142 contact info Titolo: Dr. Nome: Cristiano Cognome: Calligaro Email: send email Telefono: +39 02 89506865 Fax: +39 02 45490346
Nazionalità Coordinatore	Italy [IT]
Sito del progetto	http://www.skyflash.eu/
Totale costo	1˙543˙760 €
EC contributo	1˙052˙478 €
Programma	FP7-SPACE Specific Programme "Cooperation": Space
Code Call	FP7-SPACE-2010-1
Funding Scheme	CP
Anno di inizio	2011
Periodo (anno-mese-giorno)	2011-09-01   -   2014-02-28

 Partecipanti

#	participant	country	role	EC contrib. [€]
1	RedCat Devices Srl  Organization address address: via Valsolda 21 city: Milano postcode: 20142 contact info Titolo: Dr. Nome: Cristiano Cognome: Calligaro Email: send email Telefono: +39 02 89506865 Fax: +39 02 45490346	IT (Milano)	coordinator	258˙440.00
2	UNIVERSITA DEGLI STUDI DI MILANO  Organization address address: Via Festa Del Perdono 7 city: MILANO postcode: 20122 contact info Titolo: Dr. Nome: Fortunato Cognome: Laface Email: send email Telefono: +39 02 50317202 Fax: +39 02 50317208	IT (MILANO)	participant	188˙160.00
3	UNIVERSITY OF CYPRUS  Organization address address: KALLIPOLEOS STREET 75 city: NICOSIA postcode: 1678 contact info Titolo: Dr. Nome: Julius Cognome: Georgiou Email: send email Telefono: +357 22 892264	CY (NICOSIA)	participant	134˙000.00
4	TOWER SEMICONDUCTOR LTD  Organization address address: SHAUL AMOR 1 city: MIGDAL HAEMEK postcode: 23105 contact info Titolo: Dr. Nome: Daniel Cognome: Nahmad Email: send email Telefono: +972 4 6506368	IL (MIGDAL HAEMEK)	participant	133˙284.00
5	UNIVERSITA DEGLI STUDI DI PADOVA  Organization address address: VIA 8 FEBBRAIO 2 city: PADOVA postcode: 35122 contact info Titolo: Prof. Nome: Alessandro Cognome: Paccagnella Email: send email Telefono: +39 049 8277686	IT (PADOVA)	participant	94˙794.80
6	JYVASKYLAN YLIOPISTO  Organization address address: SEMINAARINKATU 15 city: JYVASKYLA postcode: 40100 contact info Titolo: Prof. Nome: Jukka Cognome: Maalampi Email: send email Telefono: +358 14 260 2373	FI (JYVASKYLA)	participant	84˙800.00
7	UNIVERSIDADE DE SANTIAGO DE COMPOSTELA  Organization address address: "PAZO DE SAN XEROME, PRAZA DO OBRADOIRO S/N" city: SANTIAGO DE COMPOSTELA postcode: 15782 contact info Titolo: Mr. Nome: Martin Cognome: Cacheiro Martinez Email: send email Telefono: +34 881 816233 Fax: +34 881 816263	ES (SANTIAGO DE COMPOSTELA)	participant	81˙800.00
8	UPPSALA UNIVERSITET  Organization address address: SANKT OLOFSGATAN 10 B city: UPPSALA postcode: 751 05 contact info Titolo: Ms. Nome: Gunilla Cognome: Rosquist Email: send email Telefono: +46 18 471 3845 Fax: +46 18 4713833	SE (UPPSALA)	participant	77˙200.00

Mappa

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 Obiettivo del progetto (Objective)

'The project aims to realise a strong methodology for the development and design of non volatile memories usign standard CMOS silicon process actually used for consumer electronics. Since standard silicon memories, such as other silicon devices for consumer market, fails under irradiation two different approaches are envisaged: the first one is to develop specific technological processes able to substain heavy ions and other charged particles while the second one is more devoted to use specific design and architectures. The first approach, also known as Radiation Hardening by Process (RHBP), is very expensive and tied to technological issues which can be faced only by large corporates and, due to the very low amount of final devices to be realised, very difficult to follow (great deal of effort for a small niche market). The second approach, also known as Radiation Hardening by Design (RHBD), takes the best from standard CMOS consumer processes and, using very accurate design methodologies, mitigates radiation effects on silicon processes. Semiconductor memories, among rad hard integrated circuit scenario, are one of the most critical topic and non volatile memories in particular. Actually both volatile and non volatile memories, excluding few excpetions, are integrated using standard processes and standard architectures. This means that the final device is typically at least Rad Tolerant and not Rad Hard and failure during mission is avoided using Error Correctin Code techniques including redundancy (more devices of the same type are used in voting manner) at board level. The basic goal of the project is to give a methodology for the development of a generic rad hard non volatile memory with the features actually used in consumer market (good retention, reprogrammability and cyclicity) and realise a prototype (1Mbit Flash Memory) in order to validate the approach.'

Introduzione (Teaser)

Operating without the protection of the Earth's magnetic field, electronics built for space applications must be resilient to various types of radiation. Now, prototype technology developed by EU-funded researchers promises to make flash memories tolerant of ionising radiation.